1 p-channel 30 v (d-s) mosfet features ? halogen-free according to iec 612 49-2-21 definition ?trenchfet ? power mosfet ? compliant to rohs directive 2002/95/ec ? aec-q101 qualified c notes a . pulse test; pulse width ? 300 s, duty cycle ? 2 %. b. when mounted on 1" squa re pcb (fr-4 material ). c . parametric verification ongoing. pr od uct summary v ds (v ) - 30 r ds(on ) ( ? ) a t v gs = - 10 v 0 .030 r ds(on ) ( ? ) a t v gs = - 4.5 v 0 .052 i d (a ) - 10.8 configuration s ingle s g d p-channel mosfet so-8 sd sd sd gd 5 6 7 8 t op view 2 3 4 1 or d ering info rm ation pa ck age so-8 lead (pb)-free and halo gen-free DTM4431 absolute maxim u m ratings (t c = 2 5 c, unless otherwise noted) para me te r s ymbol limit unit drain-source voltage v ds - 30 v gate-source v oltage v gs 20 continuous drain cu rrent t c = 25 c i d - 10.8 a t c = 125 c - 6.2 continuous source curre nt (diode conduction) i s - 5.4 pul s ed drain current a i dm - 43.2 s ing le p ulse avalanche current l = 0.1 mh i as - 21 s ing le pulse avalanche energy e as 22 mj maximum p o wer dissipation a t c = 25 c p d 6 w t c = 125 c 2 oper ating junction and storage temperature range t j , t stg - 55 t o + 175 c th erm al resistance ratings para me te r symbol l imit unit junction-to-ambient pcb mount b r thj a 92 c /w j unction-to-foot (drain) r thjf 25 www.din-tek.jp dt m44 31
2 not es a. pul s e test; pulse width ? 300 s, duty cycle ? 2 %. b. guaranteed by design, not su bject to production testing. c. independent of operating temperature. str e sses beyond those listed under absolute maximum ratings may cause permanen t damage to the device. these are stress rating s only, and functional operation of the device at these or any other condit ions beyond those indicated in the operatio nal sections of the sp ecifications is not implied. exposure to absolute maximum rating conditions for extended peri ods may affect de vice reliability. specificatio ns (t c = 25 c, unless otherwise noted) parameter s ymbo l t est condi tions min. typ. max. unit stat ic drain-source brea kdown voltage v ds v gs = 0 v, i d = - 250 a - 3 0 - - v gate-source threshold voltage v gs(t h) v ds = v gs , i d = - 250 a - 1.5 - - 2.5 gate -source leakage i gss v ds = 0 v, v gs = 20 v - - 100 na zero gate voltage drain current i dss v gs = 0 v v ds = - 30 v - - - 1.0 a v gs = 0 v v ds = - 30 v , t j = 125 c - - - 50 v gs = 0 v v ds = - 30 v, t j = 17 5 c - - - 150 on-state drain current a i d(on) v gs = - 10 v v ds ??? - 5 v - 2 0 - - a drain-source on-state resistance a r ds(on ) v gs = - 4.5 v i d = - 5 a - 0.039 0.05 2 ? v gs = - 10 v i d = - 6 a - 0.020 0.03 0 v gs = - 10 v i d = - 6 a, t j = 1 25 c - 0.029 0.044 v gs = - 10 v i d = - 6 a, t j = 175 c - 0.034 0.051 forward transconductance a g fs v ds = - 15 v, i d = - 6 a - 15 - s dynamic b input capacitance c iss v gs = 0 v v ds = - 25 v, f = 1 mhz - 970 1210 pf output capacitance c oss - 200 250 re ve rse transfer capacitance c rss - 140 175 total g a te charge c q g v gs = - 10 v v ds = - 30 v, i d = - 7.2 a -253 8 nc gate -source charge c q gs -4 6 gate-drain charge c q gd -5 8 turn -o n delay time c t d(on ) v dd = - 15 v, r l = 15 ? i d ? - 1 a, v gen = - 10 v , r g = 6 ? -1 0 1 5 ns ri se time c t r -121 8 tur n-off delay time c t d(of f) -335 1 fa ll time c t f -1 5 2 3 sour ce -drain diode ratings and characteristics b puls ed curr ent a i sm - - - 43.2 a fo rward voltage v sd i f = - 2.1 a, v gs = 0 v - - 0.8 - 1.1 v www.din-tek.jp dt m44 31
3 typi ca l characteristics (t a = 25 c, u n less otherwise noted) output characteristics tra n sconductance capacitance tra nsfer characteristics on-resistance vs. drain current gate charge 0 6 12 18 24 30 024681 0 v gs =10vth r u5v v gs =4v v d s - drain- to - s ource voltage (v) - drain current (a) i d v gs =3v 0 5 10 15 20 25 0 3 6 9 12 15 i d - drain c urrent (a) - tran s conductance ( s ) g f s t c = 125 c t c = - 55 c t c = 25 c c r ss 0 500 1000 1500 2000 0 5 10 15 20 25 30 c i ss c o ss v d s - drain-to- s ource voltage (v) c - capacitance (pf) 0 6 12 18 24 30 02468 10 t c = 125 c t c =2 5 c t c = - 55 c v gs - g ate- to- s ource voltage (v) - drain current (a) i d 0.00 0.03 0.06 0.09 0.12 0.15 0 6 12 18 24 30 v gs =4.5 v v gs =1 0v - on-r e s i s tance ( ) r d s (on ) i d - drain c urrent (a) 0 5 10 15 20 25 0 2 4 6 8 10 v d s = - 15 v q g - total g ate charge (nc) v gs - g ate-to- s ource voltage (v) i d = - 7.2 a www.din-tek.jp dt m44 31
4 typic al ch aracteristics (t a = 25 c, un less otherwise noted) on-resista nce vs. junction temperature source drain d iode forward voltage on-resistance vs. junction temperature on-resistance vs. gate-to-source voltage thres hold voltage - 40 - 38 - 36 - 34 - 32 - 30 - 50 - 25 0 25 50 75 100 125 150 175 i d =1ma t j - junction t emperature (c) - drain-to- s ource voltage (v) v d s 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1 0.01 0.001 0.1 10 100 t j = 25 c t j = 150 c v s d - s ource - to - drain voltage (v) - s ource current (a) i s 0.6 0.9 1.2 1.5 1.8 - 50 - 25 0 2 5 50 75 100 125 150 175 i d =7a v gs =4 . 5 v v gs =10v t j - junction t emperature (c) (normalized) - on - r e s i s tance r d s (on) 0.00 0.05 0.10 0.15 0.20 0.25 0246 8 10 t j = 25 c t j = 150 c - on-r e s i s tance ( ) r d s (on ) v gs - g ate-to - s ource voltage (v) - 0.4 - 0.1 0.2 0.5 0.8 1.1 - 50 - 25 0 25 50 75 100 125 150 175 i d = 250 a i d =1ma variance (v) v gs (th) t j - t emperature (c) www.din-tek.jp dt m44 31
5 thermal rat i ngs (t a = 25 c, unless otherwise noted) safe op era ting area normalized thermal transient impedance, junction-to-ambient v ds - drain-to-source v oltage ( v ) * v gs minimum v gs at w hich r ds(on) is specified - drain current (a) i d t c = 25 c single pulse 10 ms 1 s 10 s, dc 1 ms r ds( on) * limited by 100 ms 0.01 0.1 1 10 100 0.01 0.1 1 10 100 b v dss limited i dm limited 10 -3 10 -2 1 10 600 10 -1 10 -4 100 2 1 0.1 0.01 0.2 0.1 0.05 0.02 s ingle pul s e duty cycle = 0.5 sq uare wave pul s e duration ( s ) e vitceffe dezilamro nt nei s nart ecnadepmi lamreht 1. duty cycle, d = 2. per unit ba s e = r th j a = 92 c/w 3. t jm - t a = p dm z th ja (t ) t 1 t 2 t 1 t 2 note s : 4. s urface mounted p dm www.din-tek.jp dt m44 31
6 ther mal ra tings (t a = 25 c, unles s ot herwise noted) norm al ized thermal transient impedance, junction-to-foot note ? the characteristics shown in the two graphs - normalized transient thermal impedance junction-to-ambient (25 c) - normalized transient thermal impedance junction-to-foot (25 c) are given for general guidelines only to enable the user to get a ball park indication of part capabilities. the data are ext racted from single pulse transient thermal impedance characteristics which are developed from empirical measurements. the latter is valid for the part mounted on printed circuit board - fr4, size 1" x 1" x 0.062", double sided with 2 oz . copper, 100 % on both sides. the part ca pabilities can widely vary depending on actual application parameters and operating conditions. 10 -3 10 -2 11 0 10 -1 10 -4 2 1 0.1 0.01 0.2 0.1 0.05 0.02 single pulse duty cycle = 0.5 square w ave pulse duration (s) e v i t c e f f e d e z i l a m r o n t n e i s n a r t e c n a d e p m i l a m r e h t www.din-tek.jp dt m44 31
1 di m millimeter s inc hes min ma x min max a 1 .35 1.7 5 0.053 0.069 a 1 0 .10 0.2 0 0.004 0.008 b 0.35 0.51 0.014 0.020 c 0.19 0.25 0.0075 0.010 d 4.80 5.00 0.189 0.196 e 3.80 4.00 0.150 0.157 e 1.27 bsc 0.050 bsc h 5.80 6.20 0.228 0.244 h 0.25 0.50 0.010 0.020 l 0.50 0.93 0.020 0.037 q0 8 0 8 s 0.44 0.64 0.018 0.026 ecn: c-06527-rev. i, 11-sep-06 dwg: 5498 4 3 1 2 5 6 8 7 h e h x 45 c all lea d s q 0.101 mm 0.004" l ba 1 a e d 0.25 mm (ga ge pla ne) soic (narrow): 8-lead jedec p a rt n u m b er: ms -012 s package information www.din-tek.jp
1 appl ication note r ecommended minimum pads for so-8 0.246 (6.248) recommended mi nimum pads dimensions in inches/(mm) 0.172 (4.369) 0.152 (3.861) 0.047 (1.194) 0.028 (0.71 1) 0.050 (1.270) 0.022 (0.559) return to index r eturn to inde x application note www.din-tek.jp
1 disclaimer all product, produ ct specifications and data are subject to change without notice to improve reliability, function or design or otherwise. din-tek intertechnology, inc., its affiliates, agents, and employee s, and all persons acting on it s or their behalf (collectivel y, din-tek ), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any o ther disclosure relating to any product. din-tek makes no warranty, repres entation or guarantee regarding the suitabilit y of the products for any particular purpose or the continuing production of any product. to the maximum extent permitted by applicable law, din-tek disclaims (i) any and all liability arising out of the application or use of any product, (ii) any and all liability, including without limitation specia l, consequential or incidental damages, and (iii) any and all i mplied warranties, including warra nties of fitness for particular purpose, non-infringement and merchantability. statements regarding the suitability of products for certain type s of applications are based on din-tek s knowledge of typical requirements that are often placed on din-tek products in generic applications. such statements are not binding statements about the suitability of products for a particular application. it is the customers responsib ility to validate that a particu lar product with the properties descri bed in the product specification is suitable fo r use in a particular application. parameters provided in datasheets and/or specification s may vary in different applications an d performance may vary over time. all operating parameters, including typical pa rameters, must be validated for each customer application by the customers technical experts. product specifications do not expand or otherwise modify din-tek s terms and condit ions of purchase, including but not limited to the warranty expressed therein. except as expressly indicate d in writing, din-tek products are not designed for use in medical, life-saving, or life-sustaining applications or for any other application in which the failure of the din-tek product could result in personal injury or death. customers using or selling din-tek products not expressly indicated for use in such applications do so at their own risk. pleas e contact authorized din-tek personnel to ob tain written terms and conditions regarding products designed for such applications. no license, express or implied, by estoppel or otherwise, to any intellectual prope rty rights is granted by this document or by any conduct of din-tek . product names and markings noted herein may be trad emarks of their respective owners. material category policy din-tek intertech nology, inc. hereby certi fies that all its products that are id entified as rohs-compliant fulfill the definitions and restrictions defined under directive 2011/65/eu of the euro pean parliament and of the council of june 8, 2011 on the restriction of the use of certain hazardous substances in electrical and electronic equipment (eee) - recast, unless otherwis e specified as non-compliant. please note that some din-tek documentation may still make reference to rohs directive 2002/95/ ec. we confirm that all the products identified as being compliant to directive 2002 /95/ec conform to directive 2011/65/eu. din-tek intertechnology, inc. hereby certifi es that all its products that are identified as ha logen-free follow halogen-free requirements as per jedec js709a stan dards. please note that some din-tek documentation may still make reference to the iec 61249-2-21 definition. we co nfirm that all the products identified as being compliant to iec 61249-2-21 conform to jedec js709a standards. legal disclaimer notice www.din-tek.jp
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